Substrate for hybrid integrated circuit

Abstract

Abstract PURPOSE:To increase the capacitance of a thin film capacitor to a large extent, by forming an irregular surface on a part, where the thin film capacitor is formed, on an insulating substrate. CONSTITUTION:On the forming part of a thin film capacitor on an insulating substrate 1, a glass layer 2, which has irregularities on the surface, is formed. The thin film capacitor, which has a dielectric layer along the irregular surface of the glass layer 2, is formed. Then, the effective area of the dielectric layer along the irregular surface is larger than the apparent plane area, which is obtained by the vertical projection of the effective area. Thus, the capacitance of the thin film capacitor is increased to a large extent.

Inventors

• 👤 Kenichi Ono
• 👤 大野　兼一
• 👤 Yasushi Suda
• 👤 康司 須田

Bibliographic Details