Structure for semiconductor package

Abstract

Abstract PURPOSE:To enable to improve the humidity resistance of a semiconductor package by a method wherein the path of submersion is lengthened and complicated, and at the same time, an aluminum cap is made to cover and the exterior is sealed with a resin. CONSTITUTION:The circumference of each chip 1 soldered 4 to the terminals on an Al2O3 substrate 2 is sealed with a resin 8. At this time, the structure of this semiconductor package is made in such a structure that the intrusion of water content to intrude into the interior along the interface becomes less compared to the DIP structure by using the same family of resin materials for the materials of the substrate 2 and the resin 8. Moreover, the intrusion of water content to intrude in the interior along the interface can be decreased by providing grooves 15 in the surface of the substrate on the circumference of each chip. In addition, for improving the humidity resistance, an Al cap 3 is made to cover in such a way as to cover the coated Si chips on the substrate, and moreover, the back surface of the substrate 2, whereon input/output pins 6 are soldered through the through holes, and the gaps between the Al cap 3 and the substrate 2 are coated with a submersion-resistant epoxy or silicone resin in such a way that the gaps 5 are filled, whereby a double coating is performed on the Si chips.

Inventors

• 👤 Tasao Soga
• 👤 太佐男 曽我
• 👤 Komei Yatsuno
• 👤 八野　耕明
• 👤 Mamoru Sawahata
• 👤 沢畠　守
• 👤 Hiroshi Honjo
• 👤 本荘　浩
• 👤 Koichi Inoue
• 👤 井上　広一

Bibliographic Details