Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To secure the excellent electric contact which is highly reliable in a microscopic contact hole by a method wherein a low resistance layer, which comes in contact with the conductive layer located in a semiconductor substrate, is formed dividing into two layers through the intermediary of the contact hole. CONSTITUTION:An N<+> diffusion layer is formed on an Si semiconductor substrate 1 as a conductive layer 2. An insulating layer 3 is formed on said N<+> diffusion layer, and a microscopic contact hole 4 is perforated on the conductive layer 2. Subsequently, the first low resistance layer 6 is formed thereon. A film layer 7 is formed thereon. Then, said film layer 7 is etched back, and a film part 7' is left only on the part located on the contact hole formed region. Subsequently, the first low resistance layer 6 is removed by performing an etching, and the remaining part 6' only is left. Moreover, the film part 7' is removed by performing a plasma ashing. Then, the second low resistance layer 8 is formed thereon. Subsequently, a patterning is performed on said low resistance layer 8 and it is used as a wiring pattern.

Inventors

• 👤 Yoshihide Nagakubo
• 👤 長久保　吉秀

Bibliographic Details