Semiconductor growing device

Abstract

Abstract PURPOSE:To improve the distribution of film thickness by a method wherein fins are provided surrounding a susceptor whereon a substrate is placed, and a crystal growing method is performed while the flowing direction of reaction gas, to be supplied to a substrate by rotating the fins, is controlled. CONSTITUTION:A susceptor 10 supported by a rotating shaft 4 is provided, the substrate to be processed 1 is placed thereon, the above is heated up by a high frequency coil 5 provided outside a reaction tube 3, reaction gas is supplied from a feeding port 6 and exhausted from an exhaust port 7. Fins 11 made of carbon are integrally formed on the circumference of the susceptor 10. The gas is forcibly flowed toward the circumference by performing an organic metal epitaxial growing method (MO-CVD) in vapor phase while the susceptor 10 is rotated, thereby enabling to suppress the generation of a rising current of air. As a result, the distribution of film thickness can be improved.

Inventors

• 👤 Kenya Nakai
• 👤 中井　建弥
• 👤 Hiroya Tsuruta
• 👤 鶴田　博也

Bibliographic Details