Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of contamination, etc. due to an impurity, and to increase the working speed of a semiconductor device by removing a conductor layer, coating the side surface section of a residual conductor layer with an insulating film and thermally treating the whole in order to form a diffusion region. CONSTITUTION:In a semiconductor device such as a bipolar transistor, a buried layer 2 consisting of an N-type high concentration impurity is formed to the upper section of a P-type silicon substrate 1, an silicide 26 and a polycrystalline silicon layer 25 are applied and shaped to the main surface of the substrate, on an upper section thereof an N-type epitaxial growth layer 3a and an element isolation region 5 are formed, as conductor layers, an oxide film 7, the silicide 26 and the polycrystalline silicon layer 25 are patterned, and an oxide film 35 is applied on the whole surface. The oxide film 35 applied onto the whole surface is removed through reactive ion etching, and an end-section insulating film 37 is shaped to the side surface section of the oxide film 7 and a window 26a as the side surface sections of the silicide 26 and the polycrystalline silicon layer 25. The end-section insulating film 37 effectively prevents a diffusion on the heat treatment of an impurity from the silicide 26 as the conductor layer consisting of a metal.

Inventors

• 👤 Akio Kashiwanuma
• 👤 栢沼　昭夫

Bibliographic Details