Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain an element isolating method without 'bird beaks', by partially forming a silicon oxide film, a silicon nitride film and a resist film on a silicon substrate, implanting oxygen ions in the surface of the silicon substrate, removing the resist film, and thermally oxidizing the surface of the silicon substrate. CONSTITUTION:On a silicon substrate 11, a silicon oxide film 12, a silicon nitride film 13 and a resist film 14 are partially formed. Thereafter, oxygen ions 15 are implanted in the surface of the silicon substrate 11, and an oxygen-ion implanted layer 16 is formed. After the resist film 14 is removed, the thermal oxidation treatment is carried out in order to activate the oxygen-ion implanted layer 16 and to oxidize silicon remaining on the surface. Thus an element isolating silicon oxide film 17 is formed. In this way, the silicon oxide film in the element isolating region is formed by mainly oxygen-ion implantation. Therefore, 'bird beaks' are not formed, the active region of the semiconductor device is broadened and the element is miniaturized.

Inventors

• 👤 Seiichi Iwamatsu
• 👤 誠一 岩松

Bibliographic Details