Crucible for producing single crystal for high-purity semiconductor

Abstract

Abstract PURPOSE:To obtain the titled crucible which is large-sized and excellent in the strength without the leaching of the impurities by coating the surface of a crucible-shaped molded base material consisting of a specified nonoxide ceramic or a metallic material having high m.p. with the thermally decomposable boron nitride. CONSTITUTION:The thermally decomposable boron nitride is coated on the surface of a crucible-shaped molded body consisting of one or more kinds of nonoxide ceramics selected from among SiC, Si3N4, TiN and AlN, or one or more kinds of metallic materials having high m.p. selected from among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in about 0.01-1.0mm thickness by a CVD method.

Inventors

• 👤 Koichi Yamaguchi
• 👤 浩一 山口
• 👤 Hiroshi Aida
• 👤 比呂史 会田
• 👤 Kazunori Koga
• 👤 和憲 古賀

Bibliographic Details