Field effect type semiconductor device

Abstract

Abstract PURPOSE:To supply a current, which is controlled in correspondence with the value of a control voltage, to a load, by applying the control voltage across the second electrode as a source electrode and the third electrode as a drain electrode through the load. CONSTITUTION:First and second semiconductor regions 31 and 32 are made to be a source region and a drain region. A region between the first and second semiconductor regions 31 and 32 in a first semiconductor layer 21 of a laminated body 20 is made to be a P-channel forming layer. First-three electrodes 41-43 are made to be a gate electrode, a source electrode and a drain electrode. Thus a P-channel field effect transistor is constituted. A required power source is connected across the second electrode 42 as the source electrode and the third electrode 43 as the drain electrode. Under this state, a control voltage is applied across the second electrode 42 as the source electrode and the first electrode 41 as the gate electrode. Thus, a current, which is controlled in correspondence with the value of the control voltage, can be supplied to a load.

Inventors

• 👤 Kunishige Oe
• 👤 尾江　邦重

Bibliographic Details