Semiconductor element for neutron detector

Abstract

Abstract PURPOSE:To make it possible to increase the thickness of the boron film, by stacking the boron film to generate the (alpha) ray by the neutron ray between the non-crystalline semiconductor films to penetrate the (alpha) ray easily on the surface of the radiant ray detector in which the depletion layer is formed by utilizing the hetero junction between the monocrystalline semiconductor and the non-crystalline semiconductor. CONSTITUTION:The non-crystalline silicon layer 2 is deposited on the mono crystalline silicon plate 1 by the direct current plasma CVD method, and the hetero-junction is formed. The metal electrode 31 is coated on the non-crystalline silicon layer 2, and the metal electrode 32 is coated on the back surface of the monocrystalline silicon plate 1 through the boron thin film. The boron thin film 4 is formed by the direct current plasma CVD using the diborane of <10>B, the isotope of boron. On the metal electrode 31, the non-crystalline silicon film 5 and the boron thin film 6 are alternatively formed. Therefore the total thickness of the boron films can be thickened while the single layer is impossible to be thickened, and the generation of the alpha ray can be increased.

Inventors

• 👤 Yasukazu Seki
• 👤 康和 関
• 👤 Noritada Sato
• 👤 則忠 佐藤

Bibliographic Details