Heat treating device of semiconductor substrate

Abstract

Abstract PURPOSE:To enable to be used for a wafer being circular by providing a plurality of projections for supporting a semiconductor substrate on a infrared ray or visible light beam transmitting disk levitated or rotated by gas injected from a gas nozzle of a base, thereby preventing the wafer from contaminating or cooling by the levitating gas. CONSTITUTION:A wafer 1 is placed on a quartz fork 30 out of a quartz chamber 21, filled in the chamber 21, and placed on three quartz pins 29 of a quartz disk 28. When gas is supplied from a gas inlet 31 of a quartz base 22, the disk 28 is levitated and rotated by the gas injected from the nozzles 3, 3'. Many rod- shaped tungsten halogen lamps 26, 27 are fired to heat treat the wafer 1. Since the pins 29 are provided, the wafer 1 is prevented from contaminating or cooling due to the levitated gas, and can be used for the wafer not being circular.

Inventors

• 👤 Kazuo Hiura
• 👤 日浦　和夫
• 👤 Masayuki Suzuki
• 👤 雅行 鈴木

Bibliographic Details