Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To suppress the lateral spreading of diffusion and generation of bird's beaks, and to contrive accomplishment of high integration and microscopic formation by a method wherein an impurity layer is formed on a semiconductor substrate, an arsenic-containing layer is formed in the impurity layer and a silicon oxide film to be used for interlayer isolation is formed by performing an oxidization. CONSTITUTION:A silicon oxide film 2 and a silicon nitride film 3 are formed on a P type silicon substrate 1, and an impurity layer 5 is formed by ion-implanting P type impurities such as boron from an aperture part 4. An arsenic-containing layer 6 is provided by ion-implanting arsenic, having the oxidation speed higher than that of boron, into the impurity layer 5. A steam oxidation is performed, and an insulative oxide film 20 is formed. The oxidation speed in vertical direction is increased, the oxidation speed is cut down, and the quantity of oxygen supplied through the intermediary of the interface between the P type silicon substrate 1 and the silicon oxide film 2, thereby enabling to suppress the diffusion in lateral direction, to reduce the unnecessary region in lateral direction and to remarkably reduce the bird's beaks.

Inventors

• 👤 Kenji Tominaga
• 👤 健司 富永

Bibliographic Details