Dry etching device

Abstract

Abstract PURPOSE:To markedly improve the power of etching treatment by contriving the speed-up of etching under low pressures and at low power by a method wherein rims surrounding electrodes disposed in an array are provided with a plurality of magnetic field generation means at the position of symmetry between the respective electrodes. CONSTITUTION:A plasma 6 is generated between the upper and lower electrodes 2 and 3 by a high frequency power source 5; at the same time, conduction to electromagnetic coils 21A and 21B by means of electric wires 22A and 22B produces ring-like magnetic lines of force around the coils, which then form a cusped magnetic field 25 or a mirror magnetic field 26 at the center surrounded by these magnetic lines of force. The plasma generated by the magnetic field 25 or 26 is narrowed, and the phenomenon of diffusion of its electrons due to the thermal motion is restrained; thus, the collision density with the etching gas is increased, and ionization can be promoted. The plasma electrons are accelerated by the generation of the electric fields, causing cyclotron motion and drift motion. The probability of collision with the etching gas is increased by marked elongation of the flying distance of the charged particles of the plasma; accordingly, ionization is promoted.

Inventors

• 👤 Teru Fujii
• 👤 藤井　輝
• 👤 Takashi Kamimura
• 👤 隆 上村
• 👤 Toru Otsubo
• 👤 徹 大坪

Bibliographic Details