Manufacture of field-effect type semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability of a semiconductor device by forming an insulating film pattern at a predetermined position close to a source electrode between source and drain electrodes on an active layer on a semi-insulating substrate, forming a resist having a slit pattern, shaping a recess and forming a gate electrode on said recess. CONSTITUTION:A non-doped buffer layer 1 is formed on a semi-insulating substrate mainly comprising gallium arsenide and an active layer 2 is shaped on the buffer layer, and a source electrode 3 and a drain electrode 4 are applied and formed on the active layer to shape a low resistive contact. An insulating film 5 is formed, and an insulating film pattern 6 is formed. A slit pattern 8 is shaped to a resist 7 through development treatment, and the lower section of one side wall of the slit pattern 8 is hung over the insulating film pattern 6. A recess 9 is formed. The insulating film pattern 6 is etched by an ammonium fluoride group etching liquid. A gate metal 11 such as aluminum is evaporated and applied in vacuum to shape a gate electrode 12. Lastly, the unnecessary resist 7 and the gate metal 11 are removed.

Inventors

• 👤 Kinshiro Kosemura
• 👤 小瀬村　欣司郎

Bibliographic Details