Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To recover defective insulation by thickening a gate oxide film after forming a gate electrode, and to improve yield by thermally treating the whole in an H2 carrier gas containing H2O of 10ppm-10% within a temperature range of 500-1,200 deg.C. CONSTITUTION:A partially thick field oxide film 2 is formed on an Si substrate 1 through a well known LOCOS method. A gate oxide film 3 in 5-100nm thickness is shaped through a thermal oxidation method, and a W electrode 4 is applied selectively. Especially when there is a defect in the gate oxide film 3 and an insulation withstanding voltage defective section 5 is generated at that time, the defective section can be discriminated when currents between the W electrode 4 and the Si substrate are measured. When the presence of the insulation withstanding voltage defective section 5 is made sure after applying the W electrode 4, thermally treating the whole Si wafer, from which an integrated circuit is manufactured, in H2 containing 5% H2O under conditions such as 950 deg.C and 30min thickens the thickness of the gate oxide film 3 under a section such as the gate electrode 4 up to 20nm when the thickness of the oxide film 3 is 10nm. Accordingly, the insulation withstanding voltage defective section 5 also disappear, and excellent insulating properties are obtained.

Inventors

• 👤 Hideo Sunami
• 👤 英夫 角南
• 👤 Seiichi Iwata
• 👤 誠一 岩田
• 👤 Naoki Yamamoto
• 👤 直樹 山本
• 👤 Nobuyoshi Kobayashi
• 👤 伸好 小林

Bibliographic Details