Semiconductor device

Abstract

Abstract PURPOSE:To improve a step coverage in a minute contact region while preventing the breakage of a junction, and to increase the degree of integration by interposing a metallic layer being in contact in an ohmic manner in the contact region and applying and forming an aluminum wiring layer on the metallic layer. CONSTITUTION:An insulating layer 11 formed on a substrate is bored, and windows for leading out electrodes are bored and treated to form contact regions 12. A silicide or a nitride consisting of a high melting-point metal shaping a barrier layer 13 is grown, and an Al wiring layer 14 is formed on the barrier layer 13. Consequently, a steep stepped section is removed, and a reaction between Si and Al and a reaction between Al and an insulator are inhibited and a contact region in desired width is obtained. Accordingly, an emitter electrode 15, a base electrode 16 and a collector electrode 17 are obtained by patterning the barrier layers 11 grown on the substrate in a sputtering manner and the Al layer 14, and a bipolar semiconductor element aiming at the increase of the degree of integration is acquired.

Inventors

• 👤 Minoru Inoue
• 👤 実 井上

Bibliographic Details