Vapor phase growing apparatus

Abstract

Abstract PURPOSE:To obtain a vapor phase growing apparatus for forming films on substrates each having a large diameter by batch production by providing a susceptor having blades arranged radially around a shaft and holding substrates attached to the blades. CONSTITUTION:About 10-50 blades 11 are radially arranged around a shaft 10 at equal angles alpha to obtain a susceptor for holding substrates 4. The susceptor is put in a vapor phase growing furnace 12, the furnace 12 is evacuated through the exhaust port 14, and the substrates 4 are heated to about 1,000 deg.C with a cylindrical heating element 16. Hydrogen and dichlorosilane are fed to the furnace 12 from gas pipes 13 until the internal pressure attains a prescribed value, and uniform epitaxial films are formed while slowly rotating the susceptor with a motor 15.

Inventors

• 👤 Yuji Furumura
• 👤 雄二 古村
• 👤 Takeshi Nishizawa
• 👤 西沢　武志
• 👤 Masayuki Takeda
• 👤 正行 武田
• 👤 Mamoru Maeda
• 👤 守 前田
• 👤 Mikio Takagi
• 👤 幹夫 高木

Bibliographic Details