Production of photoconductor

Abstract

Abstract PURPOSE:To obtain a photoconductor having high sensitivity, high resolution, low dark current and high speed response by forming successively an amorphous hydrogenated silicon layer having low hydrogen content and an amorphous hydrogenated silicon layer having a high hydrogen content on a base plate and subjecting these layers to a heat treatment. CONSTITUTION:The 1st layer consisting essentially of amorphous hydrogenated silicon having a low hydrogen content is formed on a base plate which is an aluminum plate, etc. by a reactive sputtering method using a target consisting essentially of silicon in an atmosphere contg. hydrogen as reactive gas. The 2nd layer consisting essentially of amorphous hydrogenated silicon having a high hydrogen content is then formed therein. These layers are subjected to a heat treatment at about 200 deg.C in a vacuum or gaseous atmosphere of any among an inert gas, hydrogen, oxygen and nitrogen by which the intended photoconductor is obtd. The resultant photoconductor is adequately used for an image device.

Inventors

• 👤 Etsuya Takeda
• 👤 悦矢 武田
• 👤 Shinji Fujiwara
• 👤 慎司 藤原

Bibliographic Details