Forming method of groove

Abstract

Abstract PURPOSE:To remove a section more expanded than an opening section in the sectional shape of a groove formed in a substrate by forming the groove to the substrate through reactive ion etching while being passed through a polycrystalline silicon film, a nitride film and an oxide film shaped on the substrate. CONSTITUTION:An oxide film 2 and a nitride film 3 are formed on the surface of an silicon substrate 1. Polycrystalline silicon 4 and an oxide film 5 are grown. A photo-resist film 6 is formed, and patterned to shape an opening section 7. A groove is formed through etching by using CCl3F while employing the oxide film 5 formed to an opening section 8 as a mask. The surface of the silicon substrate is coated with a photo-resist film 10 while the groove 9 is filled with a photo-resist 10'. The photo-resist film 10 is etched until the oxide film 5 is exposed. The nitride film 3 is exposed through etching while using the photo- resist 10' as a mask. The photo-resist 10' in the groove is removed with an organic solvent, and the desired groove 9 with no swelling is obtained.

Inventors

• 👤 Hitoshi Abiko
• 👤 安彦　仁

Bibliographic Details