Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a high resistance voltage semiconductor device which can process a high power and high voltage signal by allowing the bottom surface of island region at the center to be in contact with the substrate through elimination of an insulating film at the time of forming a plurality of island regions on the semiconductor substrate through an insulating film and by providing input/output electrodes thereto. CONSTITUTION:An n<+> type buried layer 2 is formed on an n type Si substrate 1 by the diffusion, a composite mask 31 of which lower layer is Si3N4 while the upper layer is SiO2 is provided at the center of this surface and the SiO2 mask 3 is provided in both sides of such composite mask. A V-shaped groove reaching the substrate 1 is formed by the anisotropic etching and the SiO2 film of the masks 3 and 31 is removed. Thereafter, the SiO2 film 6 is deposited from the wall surface of V-groove to both sides thereof with the remaining Si3N4 film used as the mask, the Si3N4 film is removed, an nn<+> type support Si layer 7 is deposited on the entire part, and thereby a polycrystalline layer 72 is generated on the V-groove and a single crystal layer 71 on the region surrounded by such polycrystalline layer. Thereafter, upper and lower layers are reversed, the substrate 1 is polished until the bottom part of V-groove is exposed and the layer 71 is used as the signal electrode attaching part.

Inventors

• 👤 Tetsutada Sakurai
• 👤 桜井　哲真
• 👤 Akikazu Oono
• 👤 晃計 大野
• 👤 Katsutoshi Izumi
• 👤 泉　勝俊

Bibliographic Details