Tunnel transistor

Abstract

Abstract PURPOSE:To form a semiconductor element operating at very high speed by completely removing the effect of deceleration in a carrier travelling region except a tunnel barrier. CONSTITUTION:Degenerate semiconductors 101, 102 consisting of the same or reverse conduction type are formed on both sides of a non-degenerate semiconductor 105. Voltage V2 is applied between a source and a drain while voltage V1 is applied among gate electrodes 103, 103' and the source. Tunnel barriers are formed between the regions 101 and 105 and between the regions 102 and 105 by the application of the voltage. Consequently, the charges of a valence band in the region 101 reach to a valence band in the region 102 by a tunnel effect. Accordingly, the speed of a tunnel traisistor can be increased because the tunnel effect between the degenerate semiconductors is controlled by the nondegenerate semiconductor region and carriers are moved in a non-scattering manner.

Inventors

• 👤 Takahiro Yamada
• 👤 隆博 山田

Bibliographic Details