Semiconductor device

Abstract

Abstract PURPOSE:To simplify the wiring structure of a semiconductor device and to improve the yield and reliability of the device by a method wherein the wiring of at least one layer among intermediate layer wirings other than the uppermost layer wiring or the lowest layer wiring of the multilayer wiring is connected with the uppermost layer wiring only through a interlayer connecting hole. CONSTITUTION:An insulating film 12, a first-layer wiring 13, an insulating film 14 between the first and second layers, a second-layer wiring 16, an insulating film 17 between the second and third layers and a thirdlayer wiring 19 are seccessively formed on a semiconductor substrate 11. The third-layer wiring 19 and the first-layer wiring 13 are mutually connected through a connecting hole 20 between the first and third layers, and the third-layer wiring 19 and the second- layer wiring 16 are mutually connected through a connecting hole 18 between the second and third layers.

Inventors

• 👤 Isao Kano
• 👤 鹿野　功

Bibliographic Details