Semiconductor photo detecting device

Abstract

Abstract PURPOSE:To obtain the function of photo detection with a long wavelength by successively forming a super-lattice structural layer and the forth semiconductor layer on the first semiconductor layer, and then making the impurity concentration of said structural layer smaller than that of the fourth semiconductor layer. CONSTITUTION:The structural layer 12 and the p<+> type semiconductor layer 13 are successively formed on the n<+> type semiconductor substrate 11. The layer 12 has n<+> type super-thin semiconductor film 14 and a p<+> type one 15 laminated successively and alternately, having p type as a whole, and impurity concentration lower than that of the layer 13. This manner enables to obtain the function of photo detection with a long wavelength.

Inventors

• 👤 Seigo Taruchiya
• 👤 清悟 樽茶
• 👤 Yoshiharu Horikoshi
• 👤 佳治 堀越
• 👤 Hiroshi Okamoto
• 👤 岡本　紘

Bibliographic Details