Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To contrive to prevent the field concentration at the peripheral corner of the element region by formation of the swell of an oxide film by a method wherein, in the burial of an insulation film in a groove, a polycrystalline Si film is selectively left on the side wall of the element-forming region, and thereafter this Si film is oxidized. CONSTITUTION:Grooves 22 are formed in a P type Si substrate 21, and an SiO2 film 231 is buried in a state of sinking down from the substrate level. Thereafter, a thermal oxide film 24 is formed, and then the polycrystalline Si film 25 containing an impurity is deposited over the entire surface by CVD. This film 25 is left only on the side wall of the element-forming region by etching by the method of anisotropic dry etching. The SiO2 film by CVD again is buried in the field region. Afterwards, the film 25 is oxidized, and then a gate electrode 27 is formed in the element-forming region via gate oxide film 26. The polycrystalline Si film can form the swell of an oxide film around the element region by easy conversion into the oxide layer.

Inventors

• 👤 Masamizu Konaka
• 👤 小中　雅水
• 👤 Akira Kurosawa
• 👤 黒沢　景

Bibliographic Details