Image sensor

Abstract

Abstract PURPOSE:To improve resolution, and to lengthen the size of an image sensor by controlling film thickness and a composition so that the spectral sensitivity of amorphous silicon is fitted to a predetermined wavelength in a photosensor and laminating films and forming the photosensor. CONSTITUTION:A photosensor 6 having first spectral sensitivity consisting of an ITO film 2, an n<+>aSi film 3, an aSi film 4 and an ITO film 5, a photosensor 10 having second spectral sensitivity composed of an n<+>aSi film 7, an aSi film 8 and an ITO film 9 and a photosensor 14 having third spectral sensitivity consisting of an n<+>aSi film 11, an aSi film 12 and a Pt film 13 are laminated on a glass substrate 1, thus forming an amorphous image sensor. The peak of wavelength of spectral sensitivity can be changed by properly selecting the thickness of the aSi films and a composition of aSi is brought to aSiC, aSi(N)H, and aSi(O) ans aSiGe is used in a short-wave length region and spectral sensitivity can be shifted into a long-wave length region, thus constituting the desired color image sensor.

Inventors

• 👤 Nobuyoshi Takagi
• 👤 高城　信義
• 👤 Michiya Oura
• 👤 大浦　道也
• 👤 Nobuyoshi Kondo
• 👤 信義 近藤
• 👤 Shintaro Yanagisawa
• 👤 柳沢　真太郎
• 👤 Tetsuya Ogawa
• 👤 哲也 小川

Bibliographic Details