Capacitor

Abstract

Abstract PURPOSE:To prevent the lowering of the dieletric constant of a capacitor insulating film by forming the capacitor insulating film on an foundation layer through a nitride layer consisting of a transition metal in a semiconductor memory storage, etc. CONSTITUTION:A film 13 of a nitride consistin of a transistion metal, such as titanium nitride, tantalum nitride, chromium nitride, etc. functioning as a barrier metal preventing the diffusion of metallic atoms from a foundation layer is formed on a silicon layer 11 through evaporation, and a tantalum pentoxide layer 12 is shaped through thermal oxidation and used as a capacitor insulating film. The lowering of athe dielectric constant of the tantalum pentoxide layer by the diffusion of silicon can be prevented, and the nitride composed of the transistion metal can also be employed as an electrode because it has conductivity.

Inventors

• 👤 Tsutomu Ogawa
• 👤 力 小川
• 👤 Nobuo Niwayama
• 👤 庭山　信夫

Bibliographic Details