Semiconductor device

Abstract

Abstract PURPOSE:To improve the performance characteristics and the degree of integration of the title semiconductor device by a method wherein a reverse conductive type semiconductor layer is laminated on a one-conductive type semiconductor substrate, the one-conductive type region is provided on said semiconductor layer, and the one-conductive type region is surrouded by the one-conductive type high density region. CONSTITUTION:An N type semiconductor layer 11 is epitaxially grown on a P type semiconductor substrate. A P-well 13, which is surrounded by a P<+> high impurity density region 12 is provided on said N type semiconductor layer 11. A P-channel transistor 14 is provided directly on the N type semiconductor layer 11 and an N-channel transistor 15 is provided on the P-well 13.

Inventors

• 👤 Tsunenori Yamauchi
• 👤 経則 山内

Bibliographic Details