Surface treatment of semiconductor layer

Abstract

Abstract PURPOSE:To completely and rapidly remove the damages in a semiconductor substrate by applying heat treatment to the substrate after terminating the dry etching. CONSTITUTION:A silicon oxide or silicon nitride film or the both formed on a substrate 1 having a silicon single crystal layer on its surface are selectively etched by the dry etching method using a gas containing carbon fluoride until the silicon single crystal layer is exposed. The substrate 1 is then disposed in a quartz tube heated by an electric furnace to be subjected to oxidation. Consequently, a grown oxide film 5 is formed on the substrate 1. The oxide film 5 is removed by etching with a solution containing fluoric acid. In such a manner, crystal defects due to the dry etching can be substantially eliminated.

Inventors

• 👤 Masao Tajima
• 👤 田島　昌雄
• 👤 Eiji Igawa
• 👤 英治 井川

Bibliographic Details