Semiconductor device and manufactur thereof

Abstract

Abstract PURPOSE:To uniformaly perform impurity distribution by a method wherein the surface cut out in 7 deg. + or -3 deg. in direction <110> at the plane of <100> of a semiconductor crystal is used as the surface to be implanted. CONSTITUTION:A GaAs substrate is formed by cutting a semiinsulating GaAs crystal ingot in such a manner that a surface inclined to <110> plane will be obtained, and said surface is used as an ion implanting surface. The angle of inclination from the plane (100) is to be the angle at which no channeling effect will be generated when an ion implantation is performed and, at the same time, the range of said angle is set at 3 deg.-10 deg. with which no smoothness is impaired when an etching process is performed before ion implantation. As a result, the distribution of injected impurities can always be maintained constant, and also an ion implantation wherein no shade due to a mask used in implanting process is generated can be performed.

Inventors

• 👤 Hideaki Kozu
• 👤 神津　英明
• 👤 Masaaki Kuzuhara
• 👤 正明 葛原

Bibliographic Details