Inflared ray heat treatment device

Abstract

Abstract PURPOSE:To prevent the generation of slip lines as well as to improve the irregularity in layer resistance value of a semiconductor wafer by a method wherein the temperature distribution of the semiconductor wafer is improved in the heat treatment process performed on the semiconductor wafer. CONSTITUTION:Tungsten lamp groups 12a and 12b are arranged by dividing them into two groups respectively in order to mainly heat up the center and the circumferential sections on the upper part of a silicon wafer 11. Radiation thermometers 16a and 16b are arranged respectively on the lower part of the silicon wafer 11 for the purpose of measuring the temperature of center part and circumferential part of the wafer 11. The radiation thermomenters are connected to the tungsten lamp groups 12a and 12b through the intermediaries of power source control devices 18a and 18b and power sources 13a and 13b. Then, the signal of temperature difference in the center part and the circumferential part of the silicon wafer 11 detected by a comparator 17 is supplied to the power source control devices 18a and 18b, and the power sources 13a and 13b are controlled by the output of said power source control devices 18a and 18b, thereby enabling to make uniform the temperature distribution of the wafer whereon a heat treatment is performed.

Inventors

• 👤 Takashi Yahano
• 👤 矢羽野　俊

Bibliographic Details