Manufacture of semiconductor laser device

Abstract

Abstract PURPOSE:To enable the oscillation of single lateral mode at a low threshold value by providing a current stricture stripe by the heating with a local heating means. CONSTITUTION:An N-AlxGa1-xAs layer 11, an AlyGa1-yAs layer 12, and a P-AlxGa1-xAs layer 13 are successively crystal-grown on an N<+> GaAs single crystal substrate 10 as a single crystal, and an N-GaAs single crystal layer 26 and a P<+> GaAs polycrystalline layer 25 are grown thereon. Thereafter, a stripe for current stricture is formed by scanning of the grown surface with an Ar laser beam. As a result, the layer 25 gets the specific resistance of a region 24 become smaller than that of a region 26 by about four figures; therefore current stricture is carried out in the region 24. Further, in the layer 26, the P type dopant in the layer 25 is diffused immediately under the part of the layer 25 irradiated with the laser beam, and the layer 26 partly turns to a P-GaAs region 27. Thereby, the region 24 and the layer 13 are electrically connected via region 27; whereas a P-N junction is formed between the layer 13 and the region 26, resulting in current stricture also in the region 27.

Inventors

• 👤 Akio Yoshikawa
• 👤 昭男 吉川
• 👤 Masaru Kazumura
• 👤 数村　勝

Bibliographic Details