JPS6072259A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of producing high density integrated cmos field effect transistor
Assignee: Siemens Schuckertwerke AG
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Filing: 1984-08-23
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Granted: —
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Expires: 2004-08-23
Abstract
Abstract Translated from Japanese (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Inventors
- 👤 ウルリツヒ、シユワーベ
- 👤 エルウイン、ヤコブス
- 👤 フランツ、ネツプル
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 16:15
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/668; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859
Claims Analysis
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References Cited (Backward Citations)
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