Method for inpurity doping into semiconductor substrate

Abstract

Abstract PURPOSE:To dope impurities without causing a charge-up and breakage of elements by implanting the ions accelerated electrically into a semiconductor substrate after neutralizing the ions by an electron current, followed by annealing by a high-temperature furnace, irradiation with a high-energy beam, heating by a lamp and etc. CONSTITUTION:A p type Si substrate 1 is coated with an SiO2 film 2 and it is etched with using a resist film 3 of the predetermined size as a mask to open the desired apertures 4a and 4b. Next, on the substrate exposed in the apertures 4a and 4b, impurity doped layers 5a and 5b are formed by use of a neutral beam. At this time, the neutral beam is As<+> ion accelerated with 40keV which is then neutralized by an electron current on a way to the substrate. After that, the film 3 is removed and an SiO2 film 6 and a PSG film 7 are deposited with lamination over the whole surface. Then the substrate is subjected a heat treatment at 800-1,000 deg.C to make the layers 5a and 5b into n<+> type shallow source and drain regions 8a and 8b.

Inventors

• 👤 Kenji Shibata
• 👤 健二 柴田

Bibliographic Details