Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve bonding property, by forming copper suboxide on the surface of a lead comprising a copper member, on which a metal plated layer is not formed. CONSTITUTION:Copper suboxide is formed on the surface of a lead before a thin metal wire, which is extended from the electrode of a semiconductor element, is bonded to the lead comprising a copper member, which does not have a metal plated layer on the surface, by an ultrasonic wave method. Therefore, the breakdown of the film of the copper suboxide is ensured at the time of the ultrasonic wave bonding, and the bonding strength of the thin metal wire with respect to the lead can be secured. The copper suboxide on the surface of the lead is stable at a room temperature and is not converted into copper oxide. Therefore storage becomes easy.

Inventors

• 👤 Takao Miyoshi
• 👤 三好　孝夫

Bibliographic Details