Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To eliminate the film wear of the first Si nitride film on the part scheduled for an element region by a method wherein a non single crystal Si film doped with an impurity is converted into the third insulation film, the ends of which are then projected above the etching region. CONSTITUTION:The first insulation film 12, first oxidation resistant film 13, and non single crystal Si film 14 doped with the impurity are formed on a semiconductor substrate 11, which are then partly etched in selective manner. Further, the second insulation film 17 is formed over the surface of the etching region of the substrate 11 after the substrate 11 is etched in a tapered form, and the film 14 is converted into the third insulation film 18, the ends of which are then projected above the etching region. Next, the films 17 and 18 and the like are removed by the deposition and the anisotropic etching of the second oxidation resistant film 19, and thereafter a field oxide film 20 is formed by thermal oxidation. Therefore, the film wear of the film 13 can be prevented by the presence of the film 18, resulting in the maintenance of a suitable film thickness.

Inventors

• 👤 Takayoshi Higuchi
• 👤 樋口　孝義

Bibliographic Details