Formation of resist pattern

Abstract

Abstract PURPOSE:To form the titled pattern corrected in dimensions by a method wherein a pattern is depicted in a resist film on a substrate by means of a raster type electron beam exposure device, and then a pair of patterns for dimensional correction and detection are image-drawn in point symmetry with respect to the former pattern and are developed. CONSTITUTION:A positive resist film 1 is formed on a blank mask, and the pattern about 10mum square is image-drawn thereon by means of said exposure device. The patterns 21 and 22 for dimensional correction and detection having two shapes are image-drawn in the region of the resist film 1 other than this pattern region under the same condition. Next, patterns 21' and 22' for dimensional correction at positions shifted from those for the image-drawing of the patterns 21 and 22 by an amount less than an integer multiple of the address unit are image- drawn. After the resist film is developed, the development is stopped at the time of the contact of corners of resist patterns 31, 31' and 32, 32' for detection in two pairs formed by the development of the dimensional correction pattern.

Inventors

• 👤 Bunro Komatsu
• 👤 小松　文朗
• 👤 Akira Noma
• 👤 野間　昭

Bibliographic Details