Semiconductor light element

Abstract

Abstract PURPOSE:To cause good Bragg's reflection and enable guide of only the light of a selected wavelength by forming a multilayer crystal member obtained by alternately forming mixed crystal layers different in refractive index at prescribed intervals on a mixed crystal semiconductor substrate, with a slope formed on its one side, and forming a light guide layer on this slope. CONSTITUTION:A plurality of InP layers 13 of n1 refractive index and GaInAsP layers 14 of n2 refractive index are alternately grown on a mixed crystal semiconductor substrate 11 of, e.g. to form a multilayer crystal member 12. A slope 15 is formed by grinding or etching one side of said member 12. A light guide layer 16 made of GaInAsP is formed on the upper faces of the slope 15 and the member 12 and the surface of the substrate 11. The sum LAMBDA of the width of the layers 13,14 adjacent to each other on the side of the slope 15 is kept constant and laminated at equal intervals, resulting in guiding only the light of wavelength set with said sum LAMBDA and the difference of refractive indices n1-n2 between the layers 13,14 through the light layer 16. For example, an activated carbon layer 17 and a clad layer 18 are formed successively on the layer 16 and light produced at the layer 17 with a current is introduced into the layer 16 to cause the Bragg's reflection to use it for emission of laser beams, etc.

Inventors

• 👤 Koichi Imanaka
• 👤 今仲　行一
• 👤 Hideaki Horikawa
• 👤 英明 堀川
• 👤 Tomoyuki Yamada
• 👤 山田　朋幸
• 👤 Toshiaki Fukunaga
• 👤 敏明 福永

Bibliographic Details