Plasma chemical vapor deposition device

Abstract

Abstract PURPOSE:To contrive improvement both in productivity and operationability of the titled device by a method wherein the opposing electrodes are formed into two series, their terminals are fixed to an end cap, the electrodes to be placed in a vertical reaction tube are formed into split structure, and the sample to be processed is placed on the side face of the electrodes. CONSTITUTION:Opposing electrodes are formed into two series, the first oppos- ing electrodes 24 and 24' and the second opposing electrodes 25 and 25' are fixed to an end cap 31, a partition plate 32 is fixed to said electrodes, and they are constituted in such a manner that they can be divided. A semiconductor 29 is arranged on the back side of the outside electrodes 24 and 25, and another semiconductor 29 is arranged on both sides of the inside electrodes 24' and 25', the end cap 31 is closed, said electrodes are placed in the reaction tube 22, and the external power source 26 is connected to the outside electrodes 24 and 25. A supporting plate 32 is placed between the electrodes 24 and 25 for reinforcement, and it is used as a coupling mechanism by providing protruded and recessed parts at its tip which will be fitted together. As the semiconductor wafer 29 and the electrodes, which are divided in advance, are coupled by placing the former on the latter, the operationability of the CVD device can be improved.

Inventors

• 👤 Shuichi Ohashi
• 👤 修一 大橋

Bibliographic Details