Photoconductive material

Abstract

Abstract PURPOSE:To produce a photoconductive material with high response speed and excellent sensitivity to short wavelength light by a method wherein at least two kinds of amorphous Si alloy or amorphous Ge alloy containing Si and Ge as main constituent and C, F, H etc. as constituent are laminated to form six layers or more. CONSTITUTION:A glass substrate with its surface vacuum evaporated with Al layer is inserted into a capacity coupling type reactor to make multiple laminated films grow on a substrate by means of glow discharge of RF. At this time, the growing films contain Si and/or Ge as main constituent and either one or two kinds of element out of C, F, H as sub constituent. Moreover this structure composed of amorphous metallic body is laminated with at least two kinds of alloys to form six layers or more. Through these procedures, said photoconductive material with sufficient charging capacity and high response speed may be produced.

Inventors

• 👤 Isamu Shimizu
• 👤 勇 清水
• 👤 Yoshinori Yamaguchi
• 👤 美則 山口

Bibliographic Details