Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To obtain the titled device which exhibits the effect of static protection always constant by a method wherein a region of reverse conductivity type is formed in a semiconductor substrate of one conductivity type, a region of one conductivity type being provided therein, and a metallized layer serving as an input-output terminal being then adhered thereon via insulation film. CONSTITUTION:An N type region 2 is epitaxially grown in the surface layer part of the P type semiconductor substrate 1, a P type region 3 being diffusion- formed therein, and all of the exposed surfaces of the substrate 1 and the regions 2 and 3 being then covered with an oxide film 4. By corresponding to the region 3, the input-output terminal 5 composed of a metallized layer of the same area as that thereof is formed on the film 4. Adoption of such a structure to transistors causes the emitter-collector voltage to become larger than the cathod- anode voltage, when a voltage due to static electricity is impressed on the terminal 5. However, since the reverse withstand voltage is through as equal to the collector-base reverse withstand voltage, the emitter-collector withstand voltage becomes smaller than the reverse withstand voltage, and the absorption of surge currents increases by combination with the difference in impressed voltages due to capacitance difference.

Inventors

• 👤 Shinjiro Tanizawa
• 👤 谷沢　慎二郎

Bibliographic Details