Manufacture of semiconductor crystal thin film

Abstract

Abstract PURPOSE:To enable to perform a uniform beam annealing on a wide area mantaining a constant temperature by a method wherein a beam of light, which is shorter than the most powerful wavelength of the black body radiation at the fusing temperature of a thin film, is detected from the surface region of a semiconductor thin film, and the quantity of heat to be given to the thin film in proportion to the intensity of the detected signal is properly controlled. CONSTITUTION:A light-receiving device 6 is arranged in the obliquely upper right direction, its visual field is set in the surface region of a sample 2, and beams of light of the wavelengths lambda1 and lambda2 which are shorter than the most powerful wavelength of the black body radiation at the fusing temperature of Si are detected . The detection output of the light-receiving device 6, which is the radiation intensity P1 and P2 in wavelengths lambda1 and lambda2 is supplied to a temperature detecting circuit 7, the ratio of radiation intensity P1 and P2 is calculated, and a temperature T is detected therefrom. Then, said detected temperature T is supplied to a heater temperature control circuit 8, and the current applied to the heater 1 is controlled so that the temperature T will be brought to the constant one which is prescribed in advance.

Inventors

• 👤 Koichi Kato
• 👤 弘一 加藤

Bibliographic Details