Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To operate a semiconductor device at high speed, and to improve the degree of integration by forming an insulating film with an opening on a semiconductor substrate, forming an epitaxial layer burying the opening of the insulating film, shaping an epitaxial growth layer on the whole surface and forming an active region for an element on an opening region in the insulating film. CONSTITUTION:A high-concentration buried layer 202 is formed to a substrate 201, oxidation films 203 are shaped, and a plurality of opening sections are formed. Silicon nitride films 214 are left only on the side surfaces of the oxidation films 203. Single crystal silicon layers 204 are formed in approximately the same thickness as the oxidation films 203. Bases 205 for an I<2>L are shaped while using a resist 216 as a mask, and polycrystalline layers 206 are formed on the oxidation films and single crystal layers 206' on the single crystal silicon 204 through epitaxial growth. An I<2>L injector-section base oxidation film 208 is shaped, arsenic added polysilicon 210 is formed to collector and emitter sections for the I<2>L, and inactive base regions 217 and injector sections 209, 213 are formed.

Inventors

• 👤 Kimimaro Yoshikawa
• 👤 吉川　公磨

Bibliographic Details