Correcting method of mask pattern

Abstract

Abstract PURPOSE:To correct a defect at an arbitrary position by flowing a reactive gas precipitating a metal by an interaction with electron beams onto a mask and projecting electron beams to the defect section of a mask pattern. CONSTITUTION:When there is a broken pattern 34 in a photo-mask pattern in which metallic chromium is patterned on a glass substrate 33, bisbenzene chromium or bisbenzene molybdenum 35 is flowed on the surface of the substrate through a gas transmission pipe 35, and sucked on the surface of the substrate. When electron beams 32 are projected onto the broken pattern 34, adsorbed molecules are decomposed and precipitate metallic chromium or molybdenum, and the defective pattern can be corrected.

Inventors

• 👤 Katsumi Mori
• 👤 克己 森
• 👤 Shinji Matsui
• 👤 真二 松井
• 👤 Susumu Asata
• 👤 麻多　進

Bibliographic Details