Semiconductor device

Abstract

Abstract PURPOSE:To enable to reduce the connecting pad region of a semiconductor ele- ment having many pins in high density by connecting a plurality of electrode pads on the element for one electrode lead pin in case of connecting leads to the element. CONSTITUTION:An electrode pad 302 and 2-layer lead electrodes 303 provided on a semiconductor element (pellet) 301 are connected. The first conductor layer 305 of the lead electrode is connected to the electrode pad 302a of the end 309 side of the pellet, and the second conductor layer 308 of the lead electrode is connected to the electrode pad 302b at the center side of the element region of the pellet. Thus, one lead electrode 303 is connected to the two electrode pads 302a, 302b on the element, and a semiconductor device in which many pins of the element can be formed by highly integrating and increasing the density without increasing the size of the element (pellet) 301 can be obtained.

Inventors

• 👤 Masamichi Murase
• 👤 村瀬　眞道

Bibliographic Details