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JPS6046037A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Hitachi Ltd
•
Filing: 1984-07-25
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Granted: —
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Expires: 2004-07-25
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Abstract

Abstract PURPOSE:To improve the adhesiveness between a metal substrate and a heat sink plate by sufficiently increasing the thickness of the substrate as compared with that of an insulating plate in the relationship between the substrate and the plate, thereby removing an influence of the warpage of the plate to the heat sink or the like. CONSTITUTION:In case of the structure that a semiconductor pellet 1 and a metal substrate 2' are bonded with a brazing material 4 through an insulating plate 3', the substrate 2' is formed thinly at the lower portion of the plate 3'. This semiconductor device is further used in such a manner that the device is mounted by screws 6 to a heat sink plate 5. When the portion under the plate 3' of the substrate 2' is thus formed very thinly as compared with the plate 3, the contraction difference between the substrate 2' and the plate 3' at the brazing time is absorbed by the fact that the lower portion of the insulating plate of the substrate 2' is entirely elongated, and the warpage becomes small. If the warpage decreases, the adhesive between the substrate 2' and the plate 3' of the case that semiconductor device is mounted on the heat sink plate is improved, thereby improving the heat sink characteristic.

Inventors

  • 👤 Akio Yasukawa
  • 👤 彰夫 保川
  • 👤 Tetsuo Kumazawa
  • 👤 熊沢 鉄夫
  • 👤 Susumu Hioki
  • 👤 日置 進
  • 👤 Kenji Iimura
  • 👤 飯村 健二

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 20:25
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337

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