Recovering method of deterioration of photovoltaic device

Abstract

Abstract PURPOSE:To recover photoelectric conversion efficiency, which deteriorates once, again by projecting beams having energy smaller than the optical band gap of an optical active layer consisting of an amorphous semiconductor contributing to photoelectric conversion to the optical active layer. CONSTITUTION:Beams having energy smaller than an optical band gap Eop, which does not contribute to photoelectric conversion action effectively, are projected to an optical active layer 3, and deteriorating photoelectric conversion efficiency is recovered. Infrared beams having a 0.9-2mum wavelength zone and 500mw/cm<2> intensity as beams having energy smaller than the optical band gap of the optical active layer 3 are projected under the state in which a transparent electrode film 2 and a back electrode film 4 are short-circuited to a photovoltaic device with the optical active layer 3 consisting of a P type layer 3p composed of amorphous silicon carbide having an optical band gap Eop such as 2.0eV one, an I type layer 3i composed of amorphous silicon having Eop such as 1.75eV one and an N type layer 3n composed of amorphous silicon having Eop such as 1.75eV one, and deterioration is recovered.

Inventors

• 👤 Takeo Fukatsu
• 👤 深津　猛夫
• 👤 Masaru Takeuchi
• 👤 勝 武内
• 👤 Kazuyuki Goto
• 👤 一幸 後藤

Bibliographic Details