Electrode forming method

Abstract

Abstract PURPOSE:To enable to form an Au layer of uniform thickness on a Pt layer by a method wherein a Cr layer of low electric resistivity is formed on a Ti layer in advance, and the current distribution when a plating work is performed is made uniform using said Cr layer as a power supply layer. CONSTITUTION:A Pt layer 13 is formed on the main surface of the wafer 3 whereon a contact hole is provided by performing a sputtering of Pt. After an alloy treatment has been performed on the wafer 3, the Pt silicide layer 13 is removed from the wafer 3 by etching, and a Pt silicide layer 14 is formed on the surface of the epitaxial layer of a contact hole. Adhesion layer 15 consisting of Ti formed by performing a sputtering process and a buffer layer 16 consisting of Pt are coated on the whole main surface. Then, a power supply layer 18 consisting of Cr is formed, and the part overlapping on the buffer layer 16 is removed by etching. Lastly, an electrolyte plating process is performed on the wafer 3, and a wiring layer 17 consisting of an Au layer is formed.

Inventors

• 👤 Masamichi Kobayashi
• 👤 正道 小林

Bibliographic Details