Method and device for forming thin film

Abstract

Abstract PURPOSE:To form a thin film having stable and good quality at a low temp. and high speed in the stage of forming the thin film consisting of a specific material on a substrate by irradiating the IR ray and other electromagnetic waves generated from high-temp. and high-density plasma to a gas for forming the film. CONSTITUTION:An electrode 5 having a gas introducing hole 6 and a counter electrode 8 are provided to face each other in a vacuum vessel 12 and a film forming chamber 11 is placed in the lower part thereof. The inside of the vessel 12 is evacuated through a connecting pipe 13 of an evacuating system and a gas 4 for forming plasma is introduced into the vessel through a high-speed stop valve 7. Both electrodes of a large-capacity capacitor 1 charged with a power source 2 is connected via a switch 3 to both electrodes 5, 8 to impress a high voltage between the electrodes 5 and 8. Plasma discharge 9 is generated to the gas released through the hole 6 of the electrode 5 and an electromagnetic wave 10 such as IR ray, visible ray, UV ray, soft X-ray, etc. is irradiated through the window 15 of the chamber 11 to the inside of said plasma to bring the film forming gas 16 in the inside into reaction, thereby forming the intended thin film at a high speed on a substrate 14.

Inventors

• 👤 Ikuo Okada
• 👤 岡田　育夫
• 👤 Yasunao Saito
• 👤 斉藤　保直
• 👤 Hideo Yoshihara
• 👤 秀雄 吉原

Bibliographic Details