Manufacture of thin film of single crystal of barium lead bismuthate

Abstract

Abstract PURPOSE:To obtain a thin film having no grain boundary and showing superior superconductive characteristics by growing the titled thin film on a substrate by a sputtering method using porcelain formed by calcining a uniform powdery mixture having a specified composition as a target. CONSTITUTION:Compounds of Ba, Pb and Bi such as BaCO3, PbO2 and Bi2O3 are uniformly mixed so as to provide an atomic composition represented by the formula (where 0<=x<=1 and 1.2<=y<=2). A binder such as an aqueous soln. of PVA is added to the mixture, and they are granulated, molded, and calcined to form porcelain. The surface of the porcelain is made flat by polishing, and the porcelain is fixed in a magnetron sputtering apparatus as a target 2 by means of a supporting member 3. A gaseous mixture of Ar with O2 is introduced into the sputtering chamber 1 from the inlet 4, and a thin film of a single crystal of barium lead bismuthate is grown on a substrate 10 held on the holder 11 at 500-800 deg.C by sputtering in an atmosphere of said gaseous mixture.

Inventors

• 👤 Minoru Suzuki
• 👤 実 鈴木
• 👤 Toshiaki Murakami
• 👤 敏明 村上
• 👤 Yoshikazu Hidaka
• 👤 日高　義和

Bibliographic Details