Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To facilitate a fine wiring formation and an improvement of a wiring accuracy by a method wherein a photosensitive polyimide layer and a photoresist layer are formed and, after a light exposure, the said photosensitive polyimide layer and photoresist layer are selectively left. CONSTITUTION:A photosensitive polyimide layer 12 is formed on an insulating film 11 on a semiconductor substrate by coating and subjected to a heat-treatment and coated with a negative-type photoresist 13 and exposed with a required wiring pattern mask. Then the photoresist is developed and the photosensitive polyimide is etched to obtain a cross sectional structure shown in Figure (b). Then, after the post curing, a metal layer 14 is formed by a method such as evaporation or sputtering and a wiring layer 14' is obtained by lifting-off. Finally, remaining photosensitive polyimide 12 is removed and the metal wiring pattern 14' with a high accuracy as shown in Figure (d) can be obtained.

Inventors

• 👤 Kazuya Kauchi
• 👤 加内　一也

Bibliographic Details