Transistor

Abstract

Abstract PURPOSE:To facilitate the integration by providing a semiconductor layer having a metal lattice on a semi-insulating substrate, and providing the first electrode on the upper surface of a semiconductor layer and an impurity region connected to the second electrode on the upper surface of the semiconductor layer on the lower surface. CONSTITUTION:A semiconductor layer 3 for forming a current path is provided on a GaAs semi-insulating substrate 1. A metal lattice made of tungsten film 4 is arranged in the layer 3 to form a base. S ions are implanted to the lower surface of the layer 3 to form an N<+> type layer 2, connected to a contacting electrode 8 on the upper surface of the layer 3 through an N<+> type layer 5, and an emitter electrode 7 is provided on the upper surface of the layer 3. Since the electrode 7 and a collector electrode 8 are led to the upper surface of the substrate, the integration can be facilitated, and since the semi-insulating substrate is used, the floating capacity can be reduced.

Inventors

• 👤 Hisao Nakajima
• 👤 尚男 中島
• 👤 Susumu Takahashi
• 👤 進 高橋
• 👤 Tadashi Fukuzawa
• 👤 董 福沢
• 👤 Hironori Tanaka
• 👤 田中　広紀

Bibliographic Details